Substrate Leakage Current in InGaP/GaAs Heterojunction Bipolar Transistors

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概要

• 論文の詳細を見る

• Substrate leakage current in InGaP/GaAs heterojunction bipolar transistors (HBTs) has been observed. For a substrate thickness of 100 μm and an emitter area of 60 μm2, the parasitic current is on the order of $10^{-8}$ A. The current flowing between the collector terminal and the substrate can be decomposed into linear and parabolic components. The parabolic dependence is also observed in Medici simulation. A theoretical derivation based on electron drift in the substrate shows parabolic dependence on applied voltage, consistent with our measurement and Medici simulation. In addition, it has been found that the current is inversely proportional to the cube of substrate thickness. To account for this substrate parasitic effect, a modification of the vertical bipolar inter-company (VBIC) model is proposed.

• 2005-04-15

著者

• Hsieh Yi-jing

  Department Of Electronic Engineering National Yunlin University Of Science And Technology

• Chang Yang-hua

  Department Of Electronic Engineering National Yunlin University Of Science And Technology

• Chang Yang-Hua

  Department of Electronic Engineering, National Yunlin University of Science and Technology, Touliu 640, Taiwan, R.O.C.

• Hsieh Yi-Jing

  Department of Electronic Engineering, National Yunlin University of Science and Technology, Touliu 640, Taiwan, R.O.C.

• Chang Zhi-Juan

  Department of Electronic Engineering, National Yunlin University of Science and Technology, Touliu 640, Taiwan, R.O.C.

関連論文

• Use of Photonic Quantum Well as Tunable Defect in Multilayer Narrowband Reflection-and-Transmission Filter
• Substrate Parasitic Current in InGaP/GaAs HBTs
• Substrate Leakage Current in InGaP/GaAs Heterojunction Bipolar Transistors

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