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Department Of Electronic Engineering Faculty Of Engineering University Of Tokyo | 論文
- Electrical and Optical Properties of Ge-Doped GaP
- Phonon Sidebands in GaP : Bi
- Temperature Dependences of Pair Emission Bands in GaP : Ge
- Effects of Built-In Strain on Luminescence and Absorption Spectra of GaN Epitaxial Crystals
- Electroabsorption in ZnS:Te
- Double Diffraction in the Fresnel Region
- Low-Concentration Cadmium Diffusion into GaAs
- Improved Usage of Binary Diffractive Optical Elements in Ultrafast All-Optical Switching Modules
- Electrooptic Properties and Raman Scattering in InP
- Design and Analysis of the X-Waveguide Optical Switch in a MESFET Geometry
- Application of Modern Control Theory to Temperature Control of the MBE System
- Measurements of the Linear Electrooptic Coefficients and Analysis of the Nonlinear Susceptibilities in Cubic GaAs and Hexagonal CdS
- A Theory on the Photoelastic Coefficients and Unclamped Values of the Linear Electrooptic Coefficients
- Elastooptic Properties of InP
- On-line Partial-Filling Micellar Electrokinetic Chromatography-Mass Spectrometry
- Joint Transform Correlator for an Optical Face Recognition System
- Generalized Theory of Nonlinear Susceptibilities and Linear Electrooptic Coefficients Based on a Three-Dimensional Anharmonic Oscillator Model
- Simple Kinetic Model of ECR-RIBE Reacor for the Optimization of GaAs Etching Process
- Recent Progress of On-line Sample Preconcentration Techniques in Microchip Electrophoresis
- Impurity-Free Disordering of InGaAs/InGaAlAs/InP Quantum Wells by Dielectric Thin Cap Films and Its In-Plane Spatial Resolution