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Department Of Electronic Engineering Faculty Of Engineering University Of Tokyo | 論文
- Utilization of Non-Pseudomorphic Growth to Realize Tensile Strain on GaAs Substrates
- Fabrication of LiTaO_3 Optical Waveguide by H^+ Exchange Method
- Decrease in Deposition Rate and Improvement of Step Coverage by CF_4 Addition to Plasma-Enhanced Chemical Vapor Deposition of Silicon Oxide Films
- Preparation of Low-Dielectric-Constant F-Doped SiO2 Films by Plasma-Enhanced Chemical Vapor Deposition
- Preparation of Low Dielectric Constant F-Doped SiO_2 Films by PECVD
- Intraoperative fluorescent imaging using indocyanine green for liver mapping and cholangiography
- Design of High-Speed High-Density Parallel Adders and Multipliers Using Regenerative Pass-Transistor Logic
- Pair Luminescence from Zn-Doped GaN
- PL Property of ZnTe Grown by Chemical Transport and Its Growth Method Dependency
- Micellar Electrokinetic Chromatography
- 1.55 μm InGaAs/InAlAs/InP Quantum Wells with Mass-Dependent Width for Polarization-Independent Optical Modulation
- Deep Ultraviolet Lithography Masks Using Amorphous Silicon Films
- Interface Effects on Drain Current Instability in GaAs MESFETs with Buffer Layer : B-2: GaAs FET/LED AND DETECTOR
- Photoluminescent Properties of ZnS Grown from Tellurium Solution
- Grisms Developed for FOCAS
- Lattice Constants of the Proton-Exchanged Waveguides Formed on Domain-Inverted LiTaO_3
- Superconductive Controlled Weak-Links
- Fabrication of Multiple-Electrode Chirped-Grating-Tunable Distributed-Feedback Lasers
- Fabrication and Characteristics of an Integrated DFB Laser/Amplifier Having Reactive-Ion-Etched Tilted End Facets
- Electrooptic Light Beam Deflection with Sr_Ba_Nb_2O_5 Prism