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Department Of Electrical Engineering Stanford University | 論文
- 第一原理計算によるGaInAsNおよびGaAsSbNの物性比較
- Volume Holographic Storage in Near-Stoichiometric LiNbO_3:Ce, Mn
- Aluminum-Graded-Base PNp AlGaAs/GaAs Heterojunction Transistor with 37 GHz Cut-Off Frequency (Special Issue on Ultra-High-Speed LSIs)
- Complexity-Reduced Channel Estimation in Spatially Correlated MIMO-OFDM Systems(Wireless Communication Technologies)
- Superstructure in Thin Films of Bi-Based Compounds on MgO
- Selected Mapping Technique with Magnitude Extension for PAPR Reduction of an OFDM Signal (Wireless Communication Technologies)
- A Neurocomputational Approach to the Correspondence Problem in Computer Vision (Special Issue on Neurocomputing)
- Range-Energy Relations for Protons in Heavy Substrates
- Ge and SiGe for High Performance MOSFETs and Integrated Optical Interconnects
- Analysis of Structure and Orientation of Vertical Germanium Single Crystal Nanowires on Silicon Substrates
- Low Thermal Budget Polycrystalline Silicon-Germanium Thin-Film Transistors Fabricated by Rapid Thermal Annealing
- Heterojunction Bipolar Transistors : B-6: III-V DEVICE TECHNOLOGY
- Evaluating Strained/Relaxed-Ge, Strained-Si, Strained-SiGe For Future Nanoscale p-MOSFETs
- An Ultra-Compact Circulator Using Two-Dimensional Magneto-Optical Photonic Crystals(Selected papers from MORIS 2006 Workshop on Thermal & Optical Magnetic Materials and Devices)
- Multimedia Data Transmission over Wireless Network with Interference(Multimedia Systems for Communications)
- Generalized Performance Upper Bounds for Terminated Convolutional Codes(Fundamental Theories for Communications)
- InSAR detection of residual settlement of an ocean reclamation engineering project : a case study of Hong Kong International Airport
- MIMO Soft Near-ML Demodulation with Fixed Low-Complexity Candidate Selection
- The Interface between Single Crystalline (001) LaAlO3 and (001) Silicon