Heterojunction Bipolar Transistors : B-6: III-V DEVICE TECHNOLOGY
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-02-28
著者
-
HARRIS Jr.
Rockwell International Electronics Research Center
-
Harris Jr.
Rockwell International Microelectronics Research And Development Center
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ASBECK P.
Department of Electrical Engineering, Stanford University
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MILLER D.
Rockwell International Microelectronics Research and Development Center
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Asbeck P.
Department Of Electrical Engineering Stanford University
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- Heterojunction Bipolar Transistors : B-6: III-V DEVICE TECHNOLOGY