Reduced Geometry GaAs CCD for High Speed Signal Processing : A-6: CHARGE TRANSFER DEVICES/SIT AND OTHER DEVICES

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1980-04-30

著者

• Eden R.

  Rockwell International Electronics Research Center

• Anderson R.

  Rockwell International Electronics Research Center

• DEYHIMY I.

  Rockwell International Electronics Research Center

• HARRIS Jr.

  Rockwell International Electronics Research Center

関連論文

• Reduced Geometry GaAs CCD for High Speed Signal Processing : A-6: CHARGE TRANSFER DEVICES/SIT AND OTHER DEVICES
• Heterojunction Bipolar Transistors : B-6: III-V DEVICE TECHNOLOGY
• MSI High Speed Low Power GaAs Integrated Circuits : B-1: GaAs IC

スポンサーリンク