The Interface between Single Crystalline (001) LaAlO3 and (001) Silicon

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概要

• 論文の詳細を見る

• Atomic resolution high-angle annular dark-field imaging in scanning transmission electron microscopy is used to determine atomic arrangements at LaAlO3/Si interfaces, which were obtained by growing Si films epitaxially on (001) LaAlO3 single crystals. An unusual $3 \times 1$ interface reconstruction, in which every third La column is removed from the interface plane, is observed. The interface atomic structure is discussed in the context of electrically favorable interfacial bonding between the ionic oxide and Si.

• Japan Society of Applied Physicsの論文
• 2005-05-10

著者

• Klenov Dmitri

  Materials Department University Of California

• Stemmer Susanne

  Materials Department University Of California

• Schlom Darrell

  Department Of Electrical Engineering Stanford University

• Li Hao

  Microelectronics and Physical Sciences Laboratory, Motorola, 2100 E. Elliot Rd., Tempe, AZ 85284, U.S.A.

• Schlom Darrell

  Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802-5005, U.S.A.

関連論文

• Superstructure in Thin Films of Bi-Based Compounds on MgO
• Thickness Dependence of the Dielectric Properties of Epitaxial SrTiO3 Films on (001)Pt/SrTiO3
• Application of Metastable Phase Diagrams to Silicate Thin Films for Alternative Gate Dielectrics
• Epitaxial SrTiO3 Tunnel Barriers on Pt/MgO Substrates
• The Interface between Single Crystalline (001) LaAlO3 and (001) Silicon
• Limitations in Through-Focus Depth Sectioning in Non-Aberration Corrected High-Angle Annular Dark-Field Imaging

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