Epitaxial SrTiO3 Tunnel Barriers on Pt/MgO Substrates
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概要
- 論文の詳細を見る
Tunnel junction devices employing epitaxial, (001)-oriented SrTiO3 barriers with thicknesses between 4 and 5 nm were fabricated by sputtering on (001) Pt/MgO substrates. The quality of the Pt/SrTiO3 interface was characterized by transmission electron microscopy and the current transport studied as a function of temperature and bias field. At low voltages the junctions showed excellent insulting properties and temperature dependent, non-linear current--voltage characteristics. If junctions were biased to high fields (${>}1.25$ MV/cm) current hysteresis was observed. The hysteresis is shown to be due to time-dependent tunnel barrier properties at high fields.
- Japan Society of Applied Physicsの論文
- 2008-06-25
著者
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Stemmer Susanne
Materials Department University Of California
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Son Junwoo
Materials Department University Of California
-
Boesch Damien
Materials Department University Of California
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Cagnon Joel
Materials Department University Of California
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