スポンサーリンク
Department Of Electrical Engineering National Chung Hsing University | 論文
- Very Low Temperature Deposition of Polycrystalline Si Films Fabricated by Hydrogen Dilution with Electron Cyclotron Resonance Chemical Vapor Deposition
- Improvement in Extraction Efficiency of GaN-Based Light-Emitting Diodes with Textured Surface Layer by Natural Lithography
- Near-Ultraviolet InGaN/GaN Light-Emitting Diodes Grown on Patterned Sapphire Substrates
- Improvement in GaN-based light-emitting diodes by surface texturization with natural lithography
- GaN/Mirror/Si Light-Emitting Diodes for Vertical Current Injection by Laser Lift-Off and Wafer Bonding Techniques
- High-Power AlGaInP Light-Emitting Diodes with Patterned Copper Substrates by Electroplating
- Ion-Implantation Treatment(Ba, Sr)TiO_3 Thin Films
- Characterization of Thin-Film Electroluminescent Devices with Multiple Ta_2O_5 Interlayers Incorporated into SrS:Pr,Ce Phosphor
- High Performances of 650nm Resonant Cavity Light Emitting Diodes for Plastic Optical Fiber Applications
- A Cost Effective Interconnection Network for Reconfigurable Computing Processor in Digital Signal Processing Applications(Novel Device Architectures and System Integration Technologies)
- A High Throughput Configurable Motion Estimation Processor Core for Video Applications
- Low-Temperature-Induced Oxygen Precipitation Retardation Phenomenon in Czochralski Silicon : Effect of High-Temperature Preannealing and Other Related Phenomena
- Implementations of Low-Cost Hardware Sharing Architectures for Fast 8×8 and 4×4 Integer Transforms in H.264/AVC(Digital Signal Processing)
- Fast 2-Dimensional 8×8 Integer Transform Algorithm Design for H.264/AVC Fidelity Range Extensions(Image Processing and Video Processing)
- Centralized Fast Slant Transform Algorithms
- A Novel Reconfigurable Computing Core for Multimedia System-on-Chip Applications
- Fast Algorithm Designs for Low-Complexity 4×4 Discrete Cosine Transform(Digital Signal Processing)
- Terahertz Radiation Mechanism of Native n-Type InN with Different Carrier Concentrations
- A 1.25-Gb/s Burst-Mode Half-Rate Clock and Data Recovery Circuit Using Realigned Oscillation(Electronic Circuits)
- CHARACTERIZATION OF A-SiGe:H FILMS DEPOSITED BY PULSE RF POWER