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Department Of Electrical Engineering National Cheng Kung University | 論文
- Dielectric Properties and Crystal Structure of Mg4Nb2O9 Ceramics with Mg2+ Substituted by Zn2+ and Co2+
- A Third-Order Low-Distortion Delta-Sigma Modulator with Opamp Sharing and Relaxed Feedback Path Timing
- Reducing the Current Crowding Effect on Nitride-Based Light-Emitting Diodes Using Modulated P-Extension Electrode Thickness
- The Role of Preoperative Pulmonary Function Tests in the Surgical Treatment of Scoliosis
- Low Dislocation Densities of Nitride-Based Light-Emitting Diodes with a Preflow of NH3 Source before Growth of AlN Buffer Layer
- Enhancing the Performance of Pentacene-Based Organic Thin Film Transistors by Inserting Stacked N,N\aku '-Diphenyl-N,N\aku '-bis(1-naphthyl-phenyl)-(1,1'-biphenyl)-4,4'-diamine and Tris(8-hydroxyquinolino)-aluminum Buffer Layers
- Investigation of the Galvanic Effect between RuN Barriers and Cu Seed Layers
- An Analog CMOS Rank-Order Extractor with O(N) Complexity Using Maximum/Winner-Take-All Circuit(Integrated Electronics)
- A Low-Cost Bit-Error-Rate BIST Circuit for High-Speed ADCs Based on Gray Coding
- A p-down InGaN/GaN MQW LED Structure Grown by MOVPE
- Effects of Delay Lines on Surface Acoustic Wave Resonator Filters and Their Applications
- Microwave Dielectric Properties of ($1-x$)Nd(Co1/2Ti1/2)O3–$x$SrTiO3 Ceramics with Near Zero Temperature Coefficient of Resonant Frequency
- Microwave Dielectric Properties of ($1-x$)(Mg0.95Zn0.05)TiO3–$x$Ca0.6La0.8/3TiO3 Ceramic System
- Microwave Dielectric Characteristics of Zr0.8Sn0.2TiO4 Ceramics with WO3 Additives
- Microwave Dielectric Properties of CuO-Doped La(Co1/2Ti1/2)O3 Ceramics
- Effect of CuO Additives on Sintering and Microwave Dielectric Behaviors of 0.95Ba(Zn1/3Nb2/3)O3–0.05BaZrO3 Ceramics
- Effects of Glass Addition on Microwave Dielectric Properties of Zn0.95Mg0.05TiO3 + 0.25TiO2 Ceramics
- Microwave Dielectric Properties of Zn0.95Mg0.05TiO3 + 0.25TiO2 Ceramics with 3ZnO–B2O3 Addition
- Highly Stable Thermal Characteristics of a Novel In0.3Ga0.7As0.99N0.01(Sb)/GaAs High-Electron-Mobility Transistor
- Heterostructure Fe:InP/InGaAs Metal-Semiconductor Field-Effect Transistors Grown by Metalorganic Chemical Vapor Deposition