スポンサーリンク
Department Of Electrical Engineering Kyoto University | 論文
- Electrical and optical properties of high-density lateral junction light-emitting diodes array
- Blue Photoluminescence from ZnCdO Films Grown by Molecular Beam Epitaxy
- Growth of ZnO by Molecular Beam Epitaxy Using NO_2 as Oxygen Source
- MBE Growth of ZnO Using NO_2 as Oxygen Source
- Deep Level Study in Heteroepitaxial 3C-SiC Grown on Si by Hexamethyldisilane : Electrical Properties of Condensed Matter
- Determination of Donor Densities and Donor Levels in 3C-SiC Grown from Si_2(CH_3)_6 Using Hall-Effect Measurements
- Nitrogen Ion Implantation into 6H-SiC and Application to High-Temperature, Radiation-Hard Diodes
- Heavily Sn-doped n-Type InGaP Grown by Metalorganic Chemical Vapor Deposition
- Heteroepitaxial Growth of InGaP on Si with InGaP/GaP Step-graded Buffer Layers
- Structure Analysis of A-Si_C_x:H with Dominant Tetrahedral Si-C Bonds Deposited by Hybrid-Plasma Chemical Vapor Deposition
- Time-Resolved Reflection High-Energy Electron Diffraction Analysis in Initial Stage of 3C-SiC Growth on Si(001) by Gas Source Molecular Beam Epitaxy
- Optimization of Silicon-Based 2-Terminal Tandem Solar Cells with GaAs_P_x and InGa_P_x as Top Cell Material
- Quantitative Analysis for CH_3 Radicals in Low-Temperature Growth of 3C-SiC on Si(001) Clean Surface
- Deposition Mechanisms of SiO_2 in Remote Plasma Chemical Vapor Deposition Analyzed by Spatially Resolved Mass Spectroscopy ( Plasma Processing)
- Single Crystalline Si Metal/Oxide/Semiconductor Field-Effect Transistors Using High-Quality Gate SiO_2 Deposited at 300℃ by Remote Plasma Technique
- Measurement and Calculation of SiH_2 Radical Density in SiH_4 and Si_2H_6 Plasma for the Deposition of Hydrogenated Amorphous Silicon Thin Films
- Measurement of SiH_2 Densities in an RF-Discharge Silane Plasma Used in the Chemical Vapor Deporsition of Hydrogenated Amorphous Silicon Film
- Low-Temperature Deposition of Hydrogen-Free Silicon Oxynitride without Stress by the Remote Plasma Technique : Etching and Deposition Technology
- Low-Temperature Deposition of Hydrogen-Free Silicon Oxynitride without Stress by the Remote Plasma Technique
- Surface Morphology of YBa_2Cu_3O_ Films Prepared by Metalorganic Chemical Vapor Deposition Using Liquid Sources