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Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology | 論文
- IS-24 Expression of HPV L1 capsid protein and HPV genotypes in liquid-based cytology samples(Group3 Oncology3,International Session)
- Fundamental Study on Synthetic Aperture FM-CW Radar Polarimetry
- GaAs/AlGaAs Lensed Light Emitting Diode by the Meltback and Regrowth in Liquid Phase Epitaxy
- Cubic-Structured HfLaO for the Blocking Layer of a Charge-Trap Type Flash Memory Device
- Low-Temperature Plasma Etching of Copper Films Using Ultraviolet Irradiation
- Application of Electron Cyclotron Resonance Plasma Thermal Oxidation to Bottom Gate Polysilicon Thin-Film Transistors
- Hydrogenation of Polysilicon Thin Film Transistors Using Inductively Coupled Plasma
- Application of Electron Cyclotron Resonance Plasma Thermal Oxidation to Bottom Gate Polysilicon Thin Film Transistors
- Suppression of Leakage Current in n-Channel Polysilicon Thin-Film Transistors Using NH_3 Annealing
- A Fast and Stable Method for Detecting and Tracking Medical Organs in MRI Sequences
- Protective Effect of Gabapentin on N-Methyl-D-aspartate-Induced Excitotoxicity in Rat Hippocampal CA1 Neurons
- Maternal swimming during pregnancy enhances short-term memory and neurogenesis in the hippocampus of rat pups
- Necrotizing Enterocolitis : Experience of 27 Cases From a Single Korean Institution
- Remote Plasma-Assisted Metal Organic Chemical Vapor Deposition of Tantalum Nitride Thin Films with Different Radicals
- Barrier Metal Properties of Amorphous Tantalum Nitride Thin Films between Platinum and Silicon deposited using Remote Plasma Metal Organic Chemical Vapor Method
- Fabrication and Characterization of a Quantum Dot Flash Memory
- Fabrication and Characterization of a Quantum Dot Flash Memory
- Fabrication and Characterization of a Quantum Dot Flash Memory
- Endurance Characteristics and Degradation Mechanism of Polysilicon Thin Film Transistor EEPROMs with Electron Cyclotron Resonance N_2O-Plasma Gate Oxide
- High-Performance EEPROMs Using N- and P-Channel Poly-Si TFTs with ECR N2O-Plasma Oxide