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Department Of Electrical Engineering Hiroshima University | 論文
- Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis : Beam-Induced Physics and Chemistry
- Local Control of Magnetic Property in Stainless Steel Surface by Ion and Laser Beams : Beam-Induced Physics and Chemistry
- Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis
- Local Control of Magnetic Property in Stainless Steel Surface by Ion and Laser Beams
- Etching Rate Control by MeV O^+ Implantation for Laser-Chemical Reaction of Ferrite
- Preferentially Oriented Crystal Growth in Dynamic Mixing Process : An Approach by Monte Carlo Simulation
- Focused High-Energy Heavy Ion Beams
- Surface Structure of Ion-Implanted Silica Glass
- Tomography of Microstructures by Scanning Micro-RBS Probe
- Malignant Lymphoma Arising from Heterotopic Warthin's Tumor in the Neck : Case Report and Review of the Literature
- Growth of Large Grained Silicon on Insulator by Electron Beam Annealing and Performance of MOS Devices : A-6: SILICON CRYSTALS
- Qualitative Correspondences of Experimentally Obtained Growth Rates and Morphology of Single-Crystal Diamond with Numerical Predictions of Plasma and Gas Dynamics in Microwave Discharges for Various Substrate Holder Shapes
- Fe Deposition or Implantation into Vacuum Arc Deposited Cr Films
- Ion-Beam 3C-SiC Heteroepitaxy on Si
- Epitaxial Growth of Pure ^Si Thin Films Using Isotopically Purified Ion Beams : Semiconductors
- Silicon Carbide Film Growth Using Dual Isotopical ^Si^- and ^C^+ Ion species
- Formation of High Purity films by Negative Ion Beam Sputtering Using an Ultra-high Vacuum Self-Sputtering Method
- Formation of Ultra High Pure Metal Thin Films by Means of a Dry Process
- Macroparticle-Free Ti-Al Films by Newly Developed Coaxial Vacuum Arc Deposition
- Formation of Crystalline SiC Buried Layer by High-Dose Implantation of MeV Carbon Ions at High Temperature