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Department Of Electrical Engineering Faculty Of Engineering Hiroshima University | 論文
- YBa_2Cu_3O_ Angle Grain Boundary Junction on Si Bicrystal Substrate
- Angiogenic Potential of Dedifferentiated Fat Cells in vitro and in vivo(Peripheral Circulation/Vascular Disease (H), The 69th Annual Scientific Meeting of the Japanese Circulation Society)
- Substitutional Doping of a-Si_xN_ : H : III-1: AMORPHOUS FILMS
- Wide Optical-Gap, Photoconductive a-Si_xN_: H
- Nucleation of Microcrystallites in Phosphorus-Doped Si: H Films
- A New Technique of Boron Doping in Si:H Films
- Well-size-controlled Golloidal Gold nanoparticles Dispersed in Organic Solvents
- Self-Organized Gold Nanodots Array on a Silicon Substrate and Its Mechanical Stability
- Control of Interdot Space and Dot Size in a Two-Dimensional Gold Nanodot Array
- Self-Organization of a Two-Dimensional Array of Gold Nanodots Encapsulated by Alkanethiol
- Ordered Two-Dimensional Nanowire Array Formation Using Self-Organized Nanoholes of Anodically Oxidized Aluminum
- Highly Selective SiO_2 Etching Using CF_4/C_2H_4
- Effect of Hydrogen Dilution on Structure of a-Si:H Prepared by Substrate Impedance Tuning Technique : Condensed matter
- Microcrystallization in P-Doped Si:H Films at High Deposition Rate
- Photoinduced Absorption on Phosphorus and Nitrogen Doped a-Si:H Films Prepared at High Deposition-Rate
- Proton Nuclear Magnetic Resonance Studies on Structural Changes Induced by Annealing of Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate
- Effect of Annealing on Photoinduced Absorption in Amorphous Silicon Films Prepared at High Deposition Rates
- Annealing Effect on Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate by Substrate Impedance Tuning Technique
- Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate
- Radical- and Ion-Induced Reactions on Plasma-Deposited Silicon Surfaces