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Department Of Electrical Electronic And Computer Engineering Graduate School Of Engineering Himeji I | 論文
- Microstructure and Electrical Properties of (Pb, La)(Zr. Ti)O_3 Films Crystallized from Amorphous State by TWO-Step Postdeposition Annealing
- Effects of Pt/SrRuO_3 Top Electrodes on Ferroelectric Properties of Epitaxial(Pb, La)(Zr, Ti)O_3 Thin Films
- Measurement of MOS Leakage Conductance by Means of the Lateral Photovoltaic Effect
- Lateral Photovoltaic Effect in the Weakly Inverted and in the Depleted MOS Interface Layers
- Experimental Verification of the Small-Signal Theory of the Lateral Photovoltaic Effect in MOS Structures
- Observations of Island Structures at the Initial Growth Stage of PbZr_xTi_O_3 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
- Lateral Photovoltaic Measurements of Electrical Properties of SiAl:H/n-Type Si Structures
- Fill-Factor Calculation of Solar Cells Affected by Sheet Resistance of Surface Layer
- Crystalline and Ferroelectric Properties of Pb(Zr, Ti)O_3 Thin Films Grown by Low-Temperature Metalorganic Chemical Vapor Deposition
- Epitaxial Growth and Ferroelectric Properties of the 20-nm-Thick Pb(Zr, Ti)O_3 Film on SrTiO_3(100) with an Atomically Flat Surface by Metalorganic Chemical Vapor Deposition
- Low-Temperature Fabrication of Ir/Pb(Zr,Ti)O_3/Ir Capacitors Solely by Metalorganic Chemical Vapor Deposition
- Step Coverage Characteristics of Pb(Zr, Ti)O_3 Thin Films on Various Electrode Materials by Metalorganic Chemical Vapor Deposition
- Precise Angle and Position Detection Utilizing Optical Interference on Metal-Oxide-Semiconductor-Type Position-Sensitive Detectors
- Chemical Composition of Al_2O_3/InP Metal-Insulator-Semiconductor Interfaces Improved by Plasma and Ultraviolet Oxidation
- A Position-Sensitive MOS Device Using Lateral Photovoltaic Effect
- Oxidation of Si by Microwave-Excited Oxygen-Plasma through Protective Al Coating
- High Conductive P-Type Films of Si_Al_x:H Fabricated by Co-Sputtering and Subsequent Annealing
- Dynamic Characteristics of the Lateral Photovoltaic Effect and Their Application to the Measurement of Junction Capacitance
- Application of Lateral Photovoltaic Effect to the Measurement of the Physical Quantities of P-N Junctions : Sheet Resistivity and Junction Conductance of N^+_2 Implanted Si
- Barrier Height of InP Schottky Diodes Prepared by Means of UV Oxidation