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Department Of Electrical And Computer Engineering Nagoya Institute Of Technology | 論文
- Comparison and Investigation of Ohmic Characteristics in the Ni/AuZn and Cr/AuZn Metal Schemes
- Comparison and Investigation of Ohmic Characteristics in Ni/AuZn and Cr/Auzn to p-GaN
- Optimization Process in the P-Type Activation and Its Relationship with the Defects Structure in Mg-Doped p-GaN
- Ohmic Contact to P-Type GaN
- EPR Study of Monoclinic Centres in CsCdF_3 and CsCaF_3 Co-Doped with Gd^ and Na^+ Ions
- Evidence of Structural Phase Transition in K_2CdF_4 Derived from EPR Measurements for Cr^ Centres
- Host Lattice Effects in the EPR Spectra of Cr^-Li^+ and Cr^-V_ Centres in A_2MgF_4 (A=K,Rb) Crystals
- Electron Paramagnetic Resonance of Gd^ Centres in Rb_2CdF_4 and Cs_2CdF_4 Crystals
- EPR Study of Fe^-V_and Fe^-Li^+Centres in RbCdF_3 and CsCdF_3 Crystals
- EPR Study of Cr^Centres in Rb_ZnF_ Rb_2CdF_4 and Cs_2CdF_4 Crstals
- EPR Study of Gd^-V_m and Gd^-Li^+ Centres in Several Perovskite Fluorides
- Structures for Thermal Stress Reduction in GaAs Layers Grown on Si Substrate
- Stress Distribution Analysis in Structured GaAs Layers Fabricated on Si Substrates
- Tight-Binding Calculation of Electronic Structures of InNAs Ordered Alloys
- Electronic Structure of GaP_N_x Alloys Determined Using Pseudopotentials and Gaussian Orbitals
- Electronic Structures of Wurtzite GaN, InN and Their Alloy Ga_In_xN Calculated by the Tight-Binding Method
- Valence-Band-Edge Energy of Group-III Nitride Alloy Semiconductors
- Growth of cupric oxide nanostructure by thermal oxidation of copper (シリコン材料・デバイス)
- An ultrasonic method for synthesis of ZnO nanostructure on glass substrates (シリコン材料・デバイス)
- Growth of cupric oxide nanostructure by thermal oxidation of copper (電子デバイス)