スポンサーリンク
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology | 論文
- Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers on Si Substrates by MOCVD Using AlGaAs/AlGaP Intermediate Layers
- Psychological stress, disease activity and functional disability in patients with rheumatoid arthritis : a comparison with other chronic rheumatic or autoimmune disease patients
- Comparison of Antinuclear Antibody and Other Immunohematological Profiles among Primary Sjogren's Syndrome, Secondary Sjogren's Syndrome Associated with Rheumatoid Arthritis or Systemic Lupus Erythematosus, and Corresponding Systemic Disease
- Thrombomodulin levels in the plasma and joint fluid from patients with rheumatoid arthritis
- Growth and Characterization of Thick (100) CdTe Layers on (100) GaAs and (100) GaAs/Si Substrates by Metalorganic Vapor Phase Epitaxy : Structure and Mechanical and Thermal Properties of Condensed Matter
- In-orbit performance of the hard X-ray detector on board Suzaku
- Emission Properties of Electrodeless Argon Gas Discharge in VUV Region
- Vacuum Ultraviolet Light Source Using Electrodeless Discharge
- Vacuum Ultraviolet Detector
- GaAs / AlGaAs Light Emitters Fabricated on Undercut GaAs on Si
- Thermal Stress and Dislocation Density in Undercut GaAs on Si
- Photoluminescence Dark Spot Dynamics in GaAs Grown on Si
- Stable Operation of AlGaAs/GaAs Light-Emitting Diodes Fabricated on Si Substrate
- Zinc Diffusion in Al_Ga_As Grown on Si Substrate
- A New Reactor for Metalorganic Chemical Vapor Deposition Equipped with an Internal Rotary Flow Selector
- Role of Mast Cells in Antigen-Induced Airway Inflammation and Bronchial Hyperresponsiveness in Rats
- Characterization of Si wafer Surfaces after Wet Chemical Treatment by the Microwave Reflectance Photconductivity Decay Method with Surface Electric Field
- Slow Decay of Excess Carrier Concentration in Bonded Silicon-on-Insulator Wafers
- Control of Surface Recombination of Si Wafers by an External Electrode
- Investigation on the P-Type Activation Mechanism in Mg-doped GaN Films Grown by Metalorganic Chemical Vapor Deposition