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Daido Inst. Technol. Nagoya Jpn | 論文
- InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
- InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
- InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
- Absolute Measurement of Lattice Spacing d(220)in Floating Zone Silicon Crystal
- Absolute Measurement of Lattice Spacing d(220) Silicon Crystal in Floating Zone
- Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WN_x Gate Formation
- Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WNx Gate Formation
- High-Temperature Operation of Silicon Carbide MOSFET
- Infrared Femtosecond Laser Induced Visible Long-Lasting Phosphorescence in Mn^-Doped Sodium Borate Glasses
- Three-Dimensional Microscopic Crystallization in Photosensitive Glass by Femtosecond Laser Pulses at Nonresonant Wavelength
- Three-Dimensional Microdrilling of Glass by Multiphoton Process and Chemical Etching
- Synthesis of Superconducting T'-(La_Ce_x)_2CuO_4
- Improvement of Crystal Quality of RF-Plasma-Assisted Molecular Beam Epitaxy Grown Ga-Polarity GaN by High-Temperature Grown AIN Multiple Intermediate Layers
- High-Quality GaN on AlN Multiple Intermediate Layer with Migration Enhanced Epitaxy by RF-Molecular Beam Epitaxy
- All-Optical Inverter Operating up to 850℃ in an Erbium-Doped Phosphate Glass
- Temperature Dependence of Negative Nonlinear Absorption Effect in an Erbium-doped Borate Glass
- 50 nm Pattern Etching of Si Wafer by Synchrotron Radiation Excited CF_4 Plasma
- Electrical Properties of Al/Al_2O_3/(Ba,Rb)BiO_3/SrTiO_3(Nb) Three Terminal Device
- Sub-100nm Lithography with Using Pulsed Plasma Graft-polymerized Styrene and E-Beam Excited Plasma
- Electrical Properties of Al/Al_2O_3/(Ba,Rb)BiO_3/SrTiO_3(Nb) Three Terminal Device