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Daido Inst. Technol. Nagoya Jpn | 論文
- Measurement of Surface Fermi Level in Phosphidized GaAs
- Evidence for Phosphorus Passivation of Plasma-Induced Damage at GaAs Surface Probed by EL2 Traps
- LEED-AES and XPS Studies of Bi-Sr-Ca-Cu-O Single Crystal Surfaces
- Diffusion Coefficient Obtained from Arrival-Time Spectrum
- Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InGaAsP
- High-Performance 1.5-μm Distributed Feed Back Lasers with Strained Multi-Quantum Well Structure Grown by Metalorganic Molecular Beam Epitaxy (Chemical Beam Epitaxy)
- Low-Threshold InGaAs/ InGaAsP Multiple Quantum Well Lasers Grown by Chemical Beam Epitaxy
- Selective Area Growth of InP and InGaAs Layers on SiO_2-Masked Substrate by Chemical Beam Epitaxy
- In_Ga_As/InP Mutiquantum Well Lasers Grown by Metalorganic Molecular beam Epitaxy (MOMBE)
- Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InGaAs
- Effect of Surface Phosphidization on GaAs Schottky Barrier Junctions
- Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InP
- Light Bounces in Two-Beam Scanning Laser Interferometers
- Light Bounces in Two-Beam Scanning Laser Interferometers
- X-Ray Photoelectron Spectroscopy Studies of 7 K-Phase Bi-System Single Crystals
- XPS Studies of 80 K-Phase Bi-Sr-Ca-Cu-O Single Crystals
- LEED-AES Observations of 7 K- and 80 K-phase Bi-Sr-Ca-Cu-O Single Crystals
- The Mobility of H^+ Ions in Helium
- Adaptive control for Robot Manipulators with Flexible Joints
- The Statistical Distribution of Sparking Time-Lag