スポンサーリンク
Daido Inst. Technol. Nagoya Jpn | 論文
- Niobium Oxide Electrochromic Thin Films Prepared by Reactive DC Magnetron Sputtering
- XPS Studies of Bi-Sr-Ca-Cu-O Single Crystal and Ceramics Surfaces
- Pathological Anomalous Diffusion Generated by a Generalized Shift Map
- Liquid Phase Epitaxial Growth of High-Quality GaInAsSb/InAs
- Strength and Perceived Exertion in Isometric and Dynamic Lifting with Three Different Hand Locations
- Effect of Growth Interruption during GaAs/AlGaAs Molecular Beam Epitaxy on (411)A Substrates
- Flattening Transition 0n GaAs (411)A Surfaces Observed by Scanning Tunneling Microseopy
- Carbon δ-Doping in GaAs by Metal-Organic Molecular Beam Epitaxy
- Structural Aspects of Heavily Carbon-Doped GaAs Grown by Metalorganic Molecular Beam Epitaxy (MOMBE)
- GaAs Pseudo-Heterojunction Bipolar Transistor with a Heavily Carbon-Doped Base
- Heavily Carbon-Doped P-Type InGaAs Grown by Metalorganic Molecular Beam Epitaxy
- Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
- Effect of Heavy Doping on Band Gap and Minority Carrier Transport of AlGaAs/GaAs HBT's (SOLID STATE DEVICES AND MATERIALS 1)
- Reactive Ion Etching of Al Alloy Films in a Rotating Magnetic Field
- Detection of Oxygen Deficient Regions in YBa_2 Cu_3 O_x Superconductors by Polarized Optical Microscopy
- Large Levitation Force due to Flux Pinning in YBaCuO Superconductors Fabricated by Melt-Powder-Melt-Growth Process
- Fracture Toughness of YBaCuO Prepared by MPMG Process
- TEM Observation of Interfaces between Y_2BaCuO_5 Inclusions and the YBa_2Cu_3O_7 Matrix in Melt-Powder-Melt-Growth Processed YBaCuO
- InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode
- High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates