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College of Engineering, Hosei University | 論文
- Model Calculation of the Damage Rate Dependence of Yield Stress Change in an Irradiated Fe-Cu Model Alloy
- Redundancy Technique for Ultra-High-Speed Static RAMs
- Analysis of Dielectric Hollow Slab Waveguides Using the Finite-Difference Beam-Propagation Method
- Some Hierarchies of Relativized Time-Bounded Complexity Classes
- 相対化された多項式時間計算量クラスの細階層について
- Some Fine Hierarchies on Relativized Time-Bounded Complexity Classes(LOGIC AND THE FOUNDATIONS OF MATHEMATICS)
- Study of Surface Processes in the Digital Etching of GaAs
- A206 Investigation of Irregular Flame Behavior near Lean Limit Mixtures in a Cllosed Bomb using Microgravity Technique(Laminar flame-2)
- Process and Device Technologies for High Speed Self-Aligned Bipolar Transistors
- Thermal Decompositiom of Ce0_2 in Ultra High Vacuum as a Cause of Polycrystalline Growth of Si Films on Epitaxial Ce0_2/Si
- Polarization Dependence of Pure Bending Loss in Slab Optical Waveguides
- The Role of Hydrogen during Rapid Vapor-Phase Doping Analyzed by FTIR-ATR
- Shallow p-Type Layers in Si by Rapid Vapor-Phase Doping for High-Speed Bipolar and MOS Applications (Special Issue on Ultra-High-Speed LSIs)
- Reduction of Base Resistance and Increase in Cutoff Frequency of Si Bipolar Transistor Using Rapid Vapor-Phase Doping
- Reduction of Base Resistance and Enhancement of Cutoff Frequency of High-Speed Si Bipolar Transistor Using Rapid Vapor-Phase Doping
- Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma System : Etching and Deposition Technology
- Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma System
- Sticking Configuration of Boron Atoms from B2H6 on Silicon during Rapid Vapor-Phase Doping
- Behavior of Active and Inactive Boron in Si Produced by Vapor-Phase Doping during Subsequent Hydrogen Annealing
- Subquarter-Micrometer PMOSFET's with 50-nm Source and Drain Formed by Rapid Vapor-Phase Doping (RVD) (Special Issue on Quarter Micron Si Device and Process Technologies)