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Central Research laboratory, Hitachi Ltd. | 論文
- Gap States in a-SiGe:H Examined by the Constant Photocurrent Method
- Molecular Beam Epitaxy of Silicon-Based Heterostructure and Its Application to Novel Devices
- Single-Target Sputtering Process for Lead Zirconate Titanate Thin Films with Precise Composition Control
- Spin Polarization of Electron-Excited Secondary Electrons from a Permalloy Polycrystal
- Thermal Characteristics of Si Mask for EB Cell Projection Lithography
- Role of Ion Bombardment in Field Emission Current Instability
- Metal-Induced Solid-Phase Crystallization of Amorphous SiGe Films Insulator
- Nature and Annealing Behavior of Disorders in Ion Implanted Silicon
- Low Temperature Annealing Characteristics of Phosphorus-Implanted Silicon : A-3: DEVICE TECHNOLOGY (III)
- Acoustic Properties of Lens Materials for Ultrasonic Probes
- Current-Voltage Characteristics Including Breakdown Voltage for Au ZnO/Au/Fused Quartz Structure
- Sm-Substiuted Lead Titanate Ceramics for High Frequency Ultrasonic Probes : V: PIZOELECTRIC VIBRATOR
- Integrated Radiation Detectors with a-Si Photodiodes on Ceramic Scintillators
- Medium-Range Order of Amorphous Silicon Germanium Alloys : Small-Angle X-Ray Scattering Study
- Influence of Deposition Conditions on Properties of a-SiGe:H Prepared by Microwave-Excited Plasma CVD : Condensed Matter
- Direct Observation of a-Si:H/a-Si_C_x:H Multilayers and Their Electrical Properties : Surfaces, Interfaces and Films
- Microwave-Excited Plasma CVD of a-Si:H Films Utilizing a Hydrogen Plasma Stream or by Direct Excitation of Silane
- Chemical Vapor Deposition of a-SiGe:H Films Utilizing a Microwave-Excited Plasma
- Chemical Vapor Deposition of a-Si:H Films Utilizing a Microwave Excited Ar Plasma Stream
- Preparation of High Purity a-Si:H Films and Their Light Soaking Effects