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Central Research Laboratory. Hitachi Ltd. | 論文
- Reliability of 780-nm High-Power Laser Diodes with Thin Quantum Well Active Layer
- Improved Self-Aligned Structure for GaAlAs High-Power Lasers
- Degradation Characteristics of Ga_Al_xAs Visible Diode Lasers : B-3: LASER
- New Edge-Shift Detection Method for Write Strategy Optimization in High-Density Optical Disc Recording
- Amplification of Optical Disk Readout Signals by Homodyne Detection
- Multilayer Disk Reduced Interlayer Crosstalk with Wide Disk-Fabrication Margin
- Interlayer Crosstalk Reduction by Controlling Backward Reflectivity in Multilayer Optical Discs
- Signal-Readout System for Optical Pickup with Homodyne Detection Scheme
- A New Self-Aligned Structure for (GaAl)As High Power Lasers with Selectively Grown Light Absorbing GaAs Layers Fabricated by MOCVD
- Highly Reliable GaAlAs Visible-Light-Emitting MCSP Lasers : B-4: LD AND LED-2
- High Relaxation Oscillation Frequency (beyond 10 GHz) of GaAlAs Multiquantum Well Lasers
- High-Power Operation of Self-Sustained Pulsating AlGaAs Semiconductor Lasers with Multiquantum Well Active Layer (SOLID STATE DEVICES AND MATERIALS 1)
- Sub-Quarter-Micron Pt Etching Technology Using Electron Beam Resist with Round-Head
- Dependence of the Degradation Rate of Ga_Al_xAs Buried Hetero-Structure Injection Lasers on Optical Flux Density
- Reliable Addressing Scheme With Robust Synchronization Feature for Wobble-Groove Recording