Sub-Quarter-Micron Pt Etching Technology Using Electron Beam Resist with Round-Head

概要

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Pt patterns of 0.16, 0.25 and 0.36 μm size and without a sidewall-fence were formed using dipole ring magnetron reactive ion etcher (DRM-RIE) with round-head resist masks of 0.1, 0.2 and 0.28 μm size written by an electron beam. Critical dimension (CD) gains ranged from 50 to 60 nm, and taper angles ranged from 72 to 75°. To realize sidewall-fence-free Pt etching with a small CD gain and large taper angle, it is important to tune resist selectivity to an optimum. Taper angle becomes small and CD gain becomes large in the case of low resist selectivity; on the other hand, sidewall-fence is formed in the case of high resist selectivity. Eventually, under the condition of optimum resist selectivity, no sidewall-fence is formed and taper angle and CD gain become large and small, respectively. The optimum resist selectivity has been realized under the conditions of low pressure, high CL_2 flow rate, and high RF power.
社団法人応用物理学会の論文
1998-12-30