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Central Research Laboratory, HITACHI, Ltd. | 論文
- ArF-Excimer-Laser-Assisted Highly Selective Etching of InGaAs/InAlAs Using HBr and F_2 Gas Mixture
- Right Ventricular Volume Unloading Evaluated by Tangential Magnetocardiography
- High Dose Rate Effect of Focused-Ion-Beam Boron Implantation into Silicon
- Realization of 52.5 Gb/in^2 Perpendicular Recording
- MR2000-11 Realization of 52.5 Gb/in^2 Perpendicular Recording
- AN ANALYSIS ON NARROW TRACK PERPENDICULAR MAGNETIC RECORDING SYSTEM
- Fabrication of InAlAs/InGaAs High-Electron-Mobility Transistors Using ArF-Excimer-Laser-Assisted Damage-Free Highly Selective InGaAs/InAlAs Etching
- Highly-Selective Dry Etching of InAlAs Over InGaAs Assisted by ArF Excimer Laser with Cl_2 Gas
- Linearity Study on Enhance/Depletion Dual-Gate High Electron Mobility Transitors using Gain Mapping Method
- Use of Dioctylsulphosuccinate Sodium Salt in Supercritical Fluid Chromatography
- DC-SQUID with High-Critical-Temperature Oxide-Superconductor Film
- Molecular Beam Epitaxial Growth of (Al_yGa_)_In_P on (100) GaAs : Condensed Matter
- Electron Emission Properties and Surface Atom Behavior of an Impregnated Cathode Coated with Tungsten Thin Film Containing Sc_2O_3
- Some Fundamental Properties of Ir Coated Impregnated Cathodes
- GaAs MESFET's with a Thermally Stable LaB_6 Self-Aligned Gate
- In Situ Observation of Gold Adsorption onto Si(111)7×7 Surface by Scanning Tunneling Microscopy
- Low Voltage Light Modulation with Sr_xBa_Nb_2O_6 at Video Frequency
- High-Density Recording on a Phase-Change Optical Disk with Suppression of Material Flow and Recording-Mark Shape-Deformation
- GaAs Radiation Damage Induced by Electron Cyclotron Resonance Plasma Etching with SF_6/CHF_3
- Investigation of Mask Deformation by Oxygen-Radical Irradiation during Resist Trimming