スポンサーリンク
Central Research Laboratory, HITACHI, LTD. | 論文
- A 126mm^2 4-Gb Multilevel AG-AND Flash Memory with Inversion-Layer-Bit-Line Technology(Integrated Electronics)
- Ring-Field Extreme Ultraviolet Exposure System Using Aspherical Mirrors
- Deposition Profile of RF-Magnetron-Sputtered BaTiO_3 Thin Films
- Primary Structure, Expression, and Site-Directed Mutagenesis of Inorganic Pyrophosphatase from bacillus stearothermophilus
- Molecular Cloning,Expression,and Site-Directed Mutagenesis of Inorganic Pyrophosphatase from Thermus thermophilus HB8
- Effects of Fe Buffer Layer Thickness on Magnetoresistance in Ni-Fe/Cu Multilayers
- Oscillation of Preferred Orientation with Thickness of Cu Layer in Ni-Fe/Cu Multilayers
- Analysis of Leading Edge/Trailing Edge Independent Detection Method in Optical Disk : High Density Recording
- Analysis of Leading Edge/Trailing Edge Independent Detection Method in Optical Disk
- Influence of Ion Sputtering on Auger Electron Spectroscopy Depth-Profiling of GaAs / AlGaAs Superstructure
- PE-364 Integral Value of JT Interval in Magnetocardiogram is Sensitive to Coronary Stenosis, and It Improves Early after Successful Coronary Revascularization(ECG/Body Surface Potential Mapping/Holler 7 (A) : PE62)(Poster Session (English))
- PE-362 Multiple-current-vector Diagram of Magnetocardiography (MCG) is Highly Sensitive to Coronary Stenosis and its Abnormality Persists after Coronary Revascularization(ECG/Body Surface Potential Mapping/Holler 7 (A) : PE62)(Poster Session (English))
- PE-075 Multiple-current-vector diagram of magnetocardiography is highly sensitive to coronary stenosis : A novel technique to evaluate the inhomogeneity of myocardial repolarization(Angina Pectoris, Clinical 1 (IHD) : PE13)(Poster Session (English))
- A Thermostable Laccase from Streptomyces lavendulae REN-7 : Purification, Characterization, Nucleotide Sequence, and Expression(Biochemistry & Molecular Biology)
- Electro-Luminescence from Ultra-Thin Silicon
- X-Ray Mask Technology Utilizing an Optical Stepper
- 単一電子メモリの現状と将来
- A 128Mb Single-Electron Memory
- Positive Charge Generation at a SiO_2/Si Interface due to Bombardment with Metastable Atoms
- Thermal and Ion-Induced Reactions on a Chlorine-Adsorbed GaAs (100) Surface Studied by Metastable-Atom De-excitation Electron Spectroscopy