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Central Research Laboratories Nippon Electric Co. Ltd. | 論文
- Identification of JTP-70902, a p15^-inductive compound, as a novel MEK1/2 inhibitor
- Photocapacitance Studies on Deep Levels in GaAs and Al_xGa_As Liquid Phase Epitaxial Layers
- Determination of the Composition of Ga_xAl_As from the Photoresponse of Schottky Barriers
- Threshold Current Density and Power Saturation in Read Diode
- Rapid Degradation in Double-Heterostructure Lasers. : I. Proposal of a New Model for the Directional Growth of Dislocation Networks
- Investigation on the Drift of GaAs MESFET's by High Frequency Parameters : B-2: GaAs FET/LED AND DETECTOR
- Effect of Point Defects on Laser Oscillation Properties of Nd-Doped Y_2O_3
- Synthesis of a 110 K Superconducting Phase in the Bi-Sr-Ca-Cu-O System
- Continuous Operation of Junction Lasers at Room Temperature
- Transparent X-Ray Lithography Masks
- Preparation of X-Ray Lithography Masks with Large Area Sandwich Structure Membrane
- New Stripe Geometry Laser with High Quality Lasing Characteristics by Horizontal Transverse Mode Stabilization : A Refractive Index Guiding with Zn Doping
- A GaAs-Al_xGa_As Double Heterostructure Planar Stripe Laser
- Gain Factor and Loss in a Ga_xAl_As-GaAs Laser Diode
- Tunneling in Superconducting Binary Films
- Ion-Bombardment-Induced Improvement of Photoresist Mask Properties for RF Sputter-Etching
- A Highly Stable Al-Si Contact to Mo-Silicided Shallow Junctions
- Power GaAs MESFETs with a Graded Recess Structure : B-1: GaAs IC
- Temperature Dependence of Gunn Effect in GaAs over the Range 77°K to 545°K
- Determination of the Distribution Coefficients of Li_2O into LiNbO_3 by Phase Matching Temperatures