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Central Research Laboratories, Nippon Electric Co., Ltd. | 論文
- Annealing of Se^+-Implanted GaAs Encapsulated with As-Doped a-Si:H
- Investigation on the Drift of GaAs MESFET's by High Frequency Parameters : B-2: GaAs FET/LED AND DETECTOR
- Solar Cell Characteristics of High-Efficiency Polycrystalline Silicon Solar Cells Using SOG-Cast Wafers
- Development of High Efficiency Polycrystalline Silicon Solar Cells Using Solar Grade Cast Wafers
- Continuous Operation of Junction Lasers at Room Temperature
- Transparent X-Ray Lithography Masks
- Preparation of X-Ray Lithography Masks with Large Area Sandwich Structure Membrane
- New Stripe Geometry Laser with High Quality Lasing Characteristics by Horizontal Transverse Mode Stabilization : A Refractive Index Guiding with Zn Doping
- A GaAs-Al_xGa_As Double Heterostructure Planar Stripe Laser
- Gain Factor and Loss in a Ga_xAl_As-GaAs Laser Diode
- Tunneling in Superconducting Binary Films
- Ion-Bombardment-Induced Improvement of Photoresist Mask Properties for RF Sputter-Etching
- Power GaAs MESFETs with a Graded Recess Structure : B-1: GaAs IC
- Horizontal Mode Deformation and Anomalous Lasing Properties of Stripe Geometry Injection Lasers -Experiment
- CW Optical Power from (Al・Ga)As Double Heterostructure Lasers
- Defect Growth in (Ga・Al)As Double Heterostructure Lasers
- Lasing Characteristics in a Degraded GaAs-Al_xGa_As Double Heterostructure Laser
- Threshold Current Density and Lasing Transverse Mode in a GaAs-Al_xGa_As Double Heterostructure Laser
- Self-Induced Thermal Effects on Light Extinction of Lithium Tantalate
- A Proposed Mechanism of Low-Frequency and High-Efficiency Mode of Avalanche Diodes