Hori Masaru | Department Of Quantum Engineering School Of Engineering Nagoya University
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概要
関連著者
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堀 勝
名古屋大学大学院工学研究科電子情報システム専攻
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Hori Masaru
Department Of Electrical Engineering And Computer Science Graduate School Of Engineering Nagoya Univ
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Goto Toshio
Department Of Electronics Faculty Of Engineering Nagoya University
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Hori Masaru
Department Of Quantum Engineering School Of Engineering Nagoya University
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Goto Toshio
Department Of Electronic Mechanical Engineering Nagoya University
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Goto T
Graduate School Of Pharmaceutical Sciences Tohoku University
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Goto Takaaki
Department Of Electric Engineering Tokyo University Of Agriculture And Technology
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Hori Masaru
School Of Engineering Nagoya University
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Ohta Hiroyuki
Department Of Biological Sciences Graduate School Of Bioscience And Biotechnology Tokyo Institute Of
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Ohta Hiroyuki
Department Of Quantum Engineering Graduate School Of Engineering Nagoya University
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後藤 俊夫
Imram Tohoku University
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GOTO Toshio
Department of Agricultural Chemistry, Faculty of Agriculture, Nagoya University
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Hori Masaru
Department Of Quantum Engineering Nagoya University
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Hori Masaru
Department Of Electrical Engineering And Computer Science School Of Engineering Nagoya University
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NAGAI Mikio
Department of Quantum Engineering, Nagoya University
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GOTO Toshio
Department of Quantum Engineering, Nagoya University
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Nagai Mikio
Department Of Electrical Engineering And Computer Science Graduate School Of Engineering Nagoya Univ
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Nagashima Atsushi
Department Of Quantum Engineering Graduate School Of Engineering Nagoya University
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Nagashima Atsushi
Department Of Digestive Surgery And Surgical Oncology (surgery Ii) Yamaguchi University Graduate Sch
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Nagai Mikio
Department Of Quantum Engineering School Of Engineering Nagoya University
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MORIOKA Reiji
Department of Quantum Engineering, School of Engineering, Nagoya University
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Goto Toshio
Department Of Quantum Engineering School Of Engineering Nagoya University
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Morioka Reiji
Department Of Quantum Engineering School Of Engineering Nagoya University
著作論文
- High Performance of Silicon Oxide Selective Etching Using F_2 Gas and Graphite Instead of Perfluorinated Compound Gases
- Synthesis of Fluorinated SiN_x Gate Dielectric Films Using ECR-PECVD Employing SiF_4/N_2/H_2 Gases
- Ultrathin Fluorinated Silicon Nitride Gate Dielectric Films Formed by Plasma Enhanced Chemical Vapor Deposition Employing NH_3 and SiF_4