Ohta Hiroyuki | Department Of Quantum Engineering Graduate School Of Engineering Nagoya University

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概要

• OHTA Hiroyukiの詳細を見る
• 同名の論文著者
• Department Of Quantum Engineering Graduate School Of Engineering Nagoya Universityの論文著者

関連著者

• 堀 勝

  名古屋大学大学院工学研究科電子情報システム専攻

• Goto Takaaki

  Department Of Electric Engineering Tokyo University Of Agriculture And Technology

• Hori Masaru

  Department Of Electrical Engineering And Computer Science Graduate School Of Engineering Nagoya Univ

• Hori Masaru

  School Of Engineering Nagoya University

• Ohta Hiroyuki

  Department Of Biological Sciences Graduate School Of Bioscience And Biotechnology Tokyo Institute Of

• Goto Toshio

  Department Of Electronics Faculty Of Engineering Nagoya University

• Ohta Hiroyuki

  Department Of Quantum Engineering Graduate School Of Engineering Nagoya University

• 後藤 俊夫

  Imram Tohoku University

• Goto Toshio

  Department Of Electronic Mechanical Engineering Nagoya University

• GOTO Toshio

  Department of Agricultural Chemistry, Faculty of Agriculture, Nagoya University

• Goto T

  Graduate School Of Pharmaceutical Sciences Tohoku University

• Hori Masaru

  Department Of Quantum Engineering School Of Engineering Nagoya University

• Nagashima Atsushi

  Department Of Quantum Engineering Graduate School Of Engineering Nagoya University

• Nagashima Atsushi

  Department Of Digestive Surgery And Surgical Oncology (surgery Ii) Yamaguchi University Graduate Sch

• Ito Masafumi

  Department Of Electrical And Electronic Engineering Faculty Of Science And Technology Meijo Universi

• MORIOKA Reiji

  Department of Quantum Engineering, School of Engineering, Nagoya University

• Morioka Reiji

  Department Of Quantum Engineering School Of Engineering Nagoya University

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著作論文

• Synthesis of Fluorinated SiN_x Gate Dielectric Films Using ECR-PECVD Employing SiF_4/N_2/H_2 Gases
• Ultrathin Fluorinated Silicon Nitride Gate Dielectric Films Formed by Plasma Enhanced Chemical Vapor Deposition Employing NH_3 and SiF_4
• Control of Ion Bombardment and Species for Ultra Low Temperature Formation of Silicon Nitride Gate Dielectric Films Using Plasma Chemical Vapor Deposition

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