Iguchi Yusuke | Kobe Univ. Kobe‐shi Jpn
スポンサーリンク
概要
関連著者
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Iguchi Yusuke
Kobe Univ. Kobe‐shi Jpn
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Noguchi Hiroki
Kobe University
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Yoshimoto Masahiko
Mitsubishi Electric Corporation
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Kawaguchi Hiroshi
Kobe Univ. Kobe‐shi Jpn
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Morita Yasuhiro
Department Of Computer Science And Systems Engineering Kobe University
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YOSHIMOTO Masahiko
Kobe University
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FUJIWARA Hidehiro
Kobe University
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MORITA Yasuhiro
Kobe University
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Kawaguchi Hiroshi
Department Of Computer Science And Systems Engineering Kobe University
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Yoshimoto Masahiko
Department Of Computer Science And Systems Engineering Kobe University
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Yoshimoto Masahiko
System Lsi Development Center Mitsubishi Electric Corporation
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Yoshimoto M
Department Of Computer Science And Systems Engineering Kobe University
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FUJIWARA Hidehiro
the Graduate School of Science and Technology, Kobe University
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Nii Koji
Kobe University:renesas Technology Corporation
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Nii Koji
Kobe University
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OKUMURA Shunsuke
Kobe University
著作論文
- A Dependable SRAM with 7T/14T Memory Cells
- A 10T Non-precharge Two-Port SRAM Reducing Readout Power for Video Processing
- Area Comparison between 6T and 8T SRAM Cells in Dual-V_ Scheme and DVS Scheme(Memory Design and Test,VLSI Design and CAD Algorithms)
- Area Optimization in 6T and 8T SRAM Cells Considering V_ Variation in Future Processes(Next-Generation Memory for SoC,VLSI Technology toward Frontiers of New Market)