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Institute of Physics | 論文
- Role of nitrogen incorporation into Al
- Improvement in microhollow production using bubble cloud cavitation by dual-frequency ultrasonic wave irradiation
- Preparation of TiO
- Applications of µc-SiO
- Bottom-gate amorphous InGaZnO
- Speed enhancement at V
- Natural substrate lift-off technique for vertical light-emitting diodes
- Zero-dark-counting high-speed X-ray photon detection using a cerium-doped yttrium aluminum perovskite crystal and a small photomultiplier tube and its application to gadolinium imaging
- The influence of post-etch InGaAs fin profile on electrical performance
- Observation of deep levels and their hole capture behavior in p-type 4H-SiC epilayers with and without electron irradiation
- 15-µm-pitch Cu/Au interconnections relied on self-aligned low-temperature thermosonic flip-chip bonding technique for advanced chip stacking applications
- Comparison and distribution of minimum operation voltage in fully depleted silicon-on-thin-buried-oxide and bulk static random access memory cells
- A two-transistor bootstrap type selective device for spin-transfer-torque magnetic tunnel junctions
- High Q factor over 3000 due to out-of-plane precession in nano-contact spin-torque oscillator based on magnetic tunnel junctions
- Growth of high-indium-content InGaN:Mg thin films by MBE method with dual RF nitrogen plasma cells
- Experimental analysis of temperature elevation in ultrasonic beam from circular piston
- Investigation of InGaAs thermophotovoltaic cells under blackbody radiation
- Flexible PTB7:PC
- Bias field angle dependence of the self-oscillation of spin torque oscillators having a perpendicularly magnetized free layer and in-plane magnetized reference layer
- Impact of back-grinding-induced damage on Si wafer thinning for three-dimensional integration