Investigation of InGaAs thermophotovoltaic cells under blackbody radiation

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概要

• 論文の詳細を見る

• The efficiency calibration of InGaAs thermophotovoltaic (TPV) cells with band gap energies of 0.6 and 0.74 eV under blackbody radiation is performed on the basis of the combination of measurement with theoretical calculation. Efficiencies of 19.1% for the 0.6 eV InGaAs cell and 16.4% for the 0.74 eV InGaAs cell are obtained at the radiation temperature of 1323 K. The notable differences in reverse saturation current density and ideality factors under the blackbody radiation and standard solar spectrum illumination indicate the significant effect of the radiation spectrum on the detailed understanding of devices.

• Institute of Physicsの論文
• 2014-08-28

著者

• Tan Ming

  Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

• Tan Ming

  Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215125, China.

関連論文

• Optimization of In
• Optimization of In₀.₆₈Ga₀.₃₂As Thermophotovoltaic Device Grown on Compositionally Nonmonotonically Graded InAsP Buffer by Metal-Organic Chemical Vapor Deposition
• Investigation of InGaAs thermophotovoltaic cells under blackbody radiation

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