Optimization of In
スポンサーリンク
概要
- 論文の詳細を見る
An In<inf>0.68</inf>Ga<inf>0.32</inf>As thermophotovoltaic (TPV) cell on a compositionally nonmonotonically graded InAsP buffer with a band gap energy of 0.60 eV grown by metal--organic chemical vapor deposition (MOCVD) has been fabricated. The performance of the TPV device was greatly improved with optimized material growth, the use of an absorption layer of suitable width, and appropriate TiO<inf>2</inf>/SiO<inf>2</inf>antireflective coating design. Under standard AM1.5G spectra, the open circuit voltage (V_{\text{oc}}) increases from 0.19 to 0.23 V, the short-circuit current density (J_{\text{sc}}) increases from 43 to 56 mA/cm<sup>2</sup>, and the conversion efficiency increases from 5.31 to 8.06%. By illumination at a high intensity of 50 suns, a high conversion efficiency of 12.3% with a V_{\text{oc}} of 0.35 V is reached.
- 2013-11-25
著者
-
Lu Shulong
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
-
Tan Ming
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
-
Zhu Yaqi
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
-
Ji Lian
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
-
Chen Zhiming
Automation and Information Engineering Institute, Xi'an University of Technology, Xi'an 710054, China
-
Chen Zhiming
Automation and Information Engineering Institute, Xi'an University of Technology, Xi'an 710054, China
関連論文
- Effect of High-Temperature Pregrowth Treatment on the Surface Morphology of GaInP Epilayers on Ge Grown by Metal-Organic Vapor-Phase Epitaxy
- Optimization of In
- Optimization of In₀.₆₈Ga₀.₃₂As Thermophotovoltaic Device Grown on Compositionally Nonmonotonically Graded InAsP Buffer by Metal-Organic Chemical Vapor Deposition
- Investigation of InGaAs thermophotovoltaic cells under blackbody radiation