Optimization of In₀.₆₈Ga₀.₃₂As Thermophotovoltaic Device Grown on Compositionally Nonmonotonically Graded InAsP Buffer by Metal-Organic Chemical Vapor Deposition
スポンサーリンク
概要
著者
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Lu Shulong
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
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Tan Ming
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
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Zhu Yaqi
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
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Ji Lian
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
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Chen Zhiming
Automation and Information Engineering Institute, Xi'an University of Technology, Xi'an 710054, China
関連論文
- Effect of High-Temperature Pregrowth Treatment on the Surface Morphology of GaInP Epilayers on Ge Grown by Metal-Organic Vapor-Phase Epitaxy
- Optimization of In
- Optimization of In₀.₆₈Ga₀.₃₂As Thermophotovoltaic Device Grown on Compositionally Nonmonotonically Graded InAsP Buffer by Metal-Organic Chemical Vapor Deposition
- Investigation of InGaAs thermophotovoltaic cells under blackbody radiation