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INSTITUTE OF PURE AND APPLIED PHYSICS | 論文
- Observation of Oxide-Thickness-Dependent Interface Roughness in Si MOS Structure
- Kinetic Study on Oxidation of Si(111) Surfaces using H 2O
- Optical Recording Materials Based on TeOx Films
- New Optical-Waveguide Pockels Sensor for Measuring Electric Fields
- Ideally Ordered Metal Hole Arrays with High Aspect Ratios Prepared from Anodic Porous Alumina
- Downstream Control of Negative-Ion Plasma Parameters in Helicon Discharge
- Demonstration of Nonpolar $m$-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing $m$-Plane GaN Substrates
- Production of Stable Isotopes by Selective Channel Photofission of Pd
- A Scanning Total Reflection Method for Refractive-Index Profiling
- Theory of the Dielectric Constants of Barium Titanate
- On Dipole Interaction and Electronic Polarizabilities of NaNO2 Crystal
- An Electron Diffraction Camera with a Rotating Sector
- A New Technique Keeping off the Mn Evaporant from Oxygen Atmosphere during Reactive Evaporation Process
- Josephson Junctions with Links of Super-Normal Bilayer
- On the Electric Conductivity of Cuprous Sulfide : Experiment
- Optical Characterization of Deep Levels in Single Crystals of CuGaS2 Grown by Chemical Vapor Transport
- Enhanced Thermal Oxidation of Silicon in Steam Ambient by UV-Irradiation
- A Fractal Analysis on Domain Related Electric Field Induced Acoustic Emission in Ferroelectric Ceramics
- An MOS-Type Two-Dimensional PSD Using the AC Photovoltage Phase
- Erratum to Three Papers on the