Optical Recording Materials Based on TeOx Films

スポンサーリンク

概要

• 論文の詳細を見る

• TeOx films containing Ge, Sn or Pd were prepared for application in optical recording media by electron-beam coevaporation of Te, TeO2 and additional elements. Since these films exhibited large differences in optical constants between the amorphous and crystalline states, they are thought to be potentially useful for optical recording materials. The addition of Ge, Sn or Pd increased the transformation temperatures from the amorphous to the crystalline state in comparison with pure TeOx films. The time required for crystallization was shortened to 300 ns by the addition of Ge, Sn and Pd, while pure TeOx films required about 30 sec. The TeOx–Pd film showed excellent stability. The phase transformation mechanism of these films from the amorphous to crystalline states is discussed.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1989-05-20

著者

• Kimura Kunio

  Central Research Laboratories, Matsushita Electric Industrial Co., Ltd., 3-15 Yagumo-Nakamachi, Moriguchi, Osaka 570

• Kimura Kunio

  Central Research Laboratory, Matsushita Electric Industrial Co., Ltd., Yagumo-Nakamachi 3-15, Moriguchi-shi, Osaka 570

関連論文

• TeGeSnAu Alloys for Phase Change Type Optical Disk Memories
• Optical Recording Materials Based on TeOx Films

スポンサーリンク