TeGeSnAu Alloys for Phase Change Type Optical Disk Memories

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概要

• 論文の詳細を見る

• TeGeSnAu thin films were studied for phase change type rewritable optical disk material. Addition of Au to TeGeSn thin film shortened crystallization time. The crystallization time of Te60Ge4Sn11Au25 thin film was about 0.3 $\mu$s and was less than one 100th of that of Te80Ge5Sn15 thin film. Formation of a simple cubic structure with no atomic diffusions had caused the fast crystallization. The obtained optical disks showed high recording/erasing sensitivity, cyclability and thermal stability. The TeGeSnAu alloys will be applicable to rewritable optical disks with high data transmission rates.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1989-07-20

著者

• KURUMIZAWA Toshimitsu

  Matsushita Technoresearch Inc.

• Ohno Eiji

  Central Research Laboratories, Matsushita Electric Industrial Co., Ltd., 3-15 Yagumo-Nakamachi, Moriguchi, Osaka 570

• Takao Masatoshi

  Central Research Laboratories, Matsushita Electric Industrial Co., Ltd., 3-15 Yagumo-Nakamachi, Moriguchi, Osaka 570

• Yamada Noboru

  Development Research Laboratory, Matsushita Electric Industrial Co., Ltd., 3-15 Yagumo-Nakamachi, Moriguchi, Osaka 570

• Kimura Kunio

  Central Research Laboratories, Matsushita Electric Industrial Co., Ltd., 3-15 Yagumo-Nakamachi, Moriguchi, Osaka 570

• Kurumizawa Toshimitsu

  Matsushita Technoresearch Inc., 3-15 Yagumo-Nakamachi, Moriguchi, Osaka 570

関連論文

• Scanning Tunneling Microscope and Atomic Force Microscope Observation of Topography of Molecular-Bearm-Epitaxy-Grown Pt Films on Cu Buffer Layer and Si(111)-(7×7) Substrate
• Discriminating Molecular Length of Chemically Adsorbed Molecules Using an Atomic Force Microscope Having a Tip Covered with Sensor Molecules (An Atomic Force Microscope Having Chemical Sensing Function)
• TeGeSnAu Alloys for Phase Change Type Optical Disk Memories
• Optical Recording Materials Based on TeOx Films

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