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社団法人応用物理学会 | 論文
- Effect of Ultraviolet Light Irradiation on Noncontact Laser Microwave Lifetime Measurement
- Fluid Layer Heated from Above
- Profile Measurements of Methane Saturated Absorption Using a Methane-Stabilized Laser Spectrometer
- Si Quantum Dot Formation with Low-Pressure Chemical Vapor Deposition
- Strain Profile of Plastic Zone in Dislocation-Free Niobium Single Crystal Determined by X-Ray Topography
- Defect-Clusters in Electron and in Neutron Irradiated Lithium Fluoride
- On the Stability of Nonhomogeneous Shear Flows
- Fluid Layer Heated from Above II
- Calculation of Electron Attachment Rate Coefficient in Fluorine
- Measurement of Differential Cross Sections of Low-Energy Electrons Elastically Scattered by Gas Molecules. : I. Apparatus
- Molecular Design of Optical and Structural Properties of Organic Semiconductor Films : Thiophene-Based Oligomers
- Photon Collection Enhancement by White Rear Cover Reflection and the Design of Reference Cells for Module Performance Measurement
- Electroslatie Contribution to the Distortion Free Energy Density of Ferroelectric Liquid Crystals
- Dynamic Scanning Force Microscopy at Low Temperatures
- Superconducting T′-La_Ce_xCuO_4 Films Grown by Molecular Beam Epitaxy
- Observation of Wet Biological Materials in a High Voltage Electron Microscope
- Optically Stimulated Exoelectron Emission/OSEE/as Correlated with the Plastic Properties of Stainless Steel and the Degree of Structural Defectiveness : Exoemission Associated with Mechanical Treatments
- Optically Stimulated Exoelectron Emission for Determining the Degree of Hydrogen Embrittlement of Nickel : Exoemission Associated with Mechanical Treatments
- Dislocation Climb Rate and Activation Energy of Relaxation Processes in Dislocations at Temperatures ca. 100 K : Exoemission Associated with Mechanical Treatments
- Dependence of Photoluminescence Intensity Enhancement due to Sulfide Treatment on Carrier Concentration and Conduction Type of GaAs