Dependence of Photoluminescence Intensity Enhancement due to Sulfide Treatment on Carrier Concentration and Conduction Type of GaAs

概要

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We find that the photoluminescence intensity enhancement associated with sulfide treatment strongly depends on the carrier concentration and conduction type. The band bending of p-type GaAs decreases, and that of n-type GaAs increases. Surface states are more markedly reduced between the midgap and the conduction band minimum, than between the valence band maximum and the midgap. It is considered that donor-like surface states which capture the electrons are distributed between the midgap and the conduction band maximum, explaining the large intensity enhancement of p-type GaAs with high carrier concentrations, and the very small enhancement of n-type GaAs with high carrier concentration.
社団法人応用物理学会の論文
1993-07-01