A Proposal of Corrugated-Channel Transistor (CCT) with Vertically-Formed Channels for Area-Conscious Applications
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-30
著者
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Yamashita Hiroki
Hiroshima University Research Center For Nanodevices And Systems
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Sunami H
Hiroshima Univ. Hiroshima Jpn
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Sunami Hideo
Hiroshima Univ. Hiroshima Jpn
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FURUKAWA Tomoyasu
Hiroshima University, Research Center for Nanodevices and Systems
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Furukawa Tomoyasu
Hiroshima University Research Center For Nanodevices And Systems
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- Proposal of a Silicon Optical Modulator Based on Inversion-Carrier Absorption
- Field-Shield Trench Isolation with Self-Aligned Field Oxide
- A Proposal of Corrugated-Channel Transistor (CCT) with Vertically-Formed Channels for Area-Conscious Applications
- An Experimental Analysis of 1.55-μm Infrared Light Propagation in Integrated SOI Structure
- A High-Aspect-Ratio Silicon Gate Formation Technique for Beam-Channel MOS Transistor with Impurity-Enhanced Oxidation
- An Infrared Silicon Optical Modulator of Metal–Oxide–Semiconductor Capacitor Based on Accumulation-Carrier Absorption
- Proposal of Vertical-Channel Metal Oxide Semiconductor Field-Effect Transistor with Entirely Oxidized Silicon Beam Isolation
- A Proposal of Corrugated-Channel Transistor (CCT) with Vertically-Formed Channels for Area-Conscious Applications