A High-Aspect-Ratio Silicon Gate Formation Technique for Beam-Channel MOS Transistor with Impurity-Enhanced Oxidation

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-04-30

著者

• Sunami Hideo

  Hiroshima Univ. Hiroshima Jpn

• Sunami Hideo

  Hiroshima University Research Center For Nanodevices And Systems

• KATAKAMI Akira

  Hiroshima University, Research Center for Nanodevices and Systems

• KOBAYASHI Kei

  Hiroshima University, Research Center for Nanodevices and Systems

関連論文

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• A Proposal of Corrugated-Channel Transistor (CCT) with Vertically-Formed Channels for Area-Conscious Applications
• An Experimental Analysis of 1.55-μm Infrared Light Propagation in Integrated SOI Structure
• A High-Aspect-Ratio Silicon Gate Formation Technique for Beam-Channel MOS Transistor with Impurity-Enhanced Oxidation
• An Infrared Silicon Optical Modulator of Metal–Oxide–Semiconductor Capacitor Based on Accumulation-Carrier Absorption
• Proposal of Vertical-Channel Metal Oxide Semiconductor Field-Effect Transistor with Entirely Oxidized Silicon Beam Isolation
• A Proposal of Corrugated-Channel Transistor (CCT) with Vertically-Formed Channels for Area-Conscious Applications

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