An Infrared Silicon Optical Modulator of Metal–Oxide–Semiconductor Capacitor Based on Accumulation-Carrier Absorption
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概要
- 論文の詳細を見る
A silicon optical modulator of a metal–oxide–semiconductor (MOS) capacitor based on free-carrier absorption has been proposed and successfully developed. In this report, its modulation performance with accumulation-mode absorption instead of inversion-mode absorption is described expecting better absorption performance due to the relatively smaller carrier mobility of holes. The device consists of an 8-mm-long and 1.5-μm-thick (110) silicon-on-insulator core and a surrounding clad of 1.5-μm-thick buried oxide underneath and doped polycrystalline silicon on top. Infrared light absorption by accumulation carriers is not sufficiently strong in the 1.55-μm-infrared-wavelength regime. However, an optical response of 13% at a gate voltage of $-30$ V is obtained. Preliminary analysis has also been conducted for the potential of the optical modulator based on accumulation-carrier absorption. It is predicted that this modulator will be more effective in deeper-infrared regions unlike other modulators such as the Mach–Zehnder interferometer.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-04-25
著者
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Sunami Hideo
Hiroshima Univ. Hiroshima Jpn
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Tabei Tetsuo
Hiroshima University Research Center For Nanodevices And Systems
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Kajikawa Kenta
Hiroshima University Research Center For Nanodevices And Systems
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Kajikawa Kenta
Hiroshima University, Research Institute for Nanodevice and Bio Systems, Higashihiroshima, Hiroshima 739-8527, Japan
関連論文
- A High-Aspect-Ratio Silicon Gate Formation Technique for Beam-Channel MOS Transistor with Impurity-Enhanced Oxidation
- An infrared silicon optical modulator of metal-oxide-semiconductor capacitor based on accumulation-carrier absorption (Special issue: Solid state devices and materials)
- Proposal of a Silicon Optical Modulator Based on Inversion-Carrier Absorption
- A Proposal of Corrugated-Channel Transistor (CCT) with Vertically-Formed Channels for Area-Conscious Applications
- An Experimental Analysis of 1.55-μm Infrared Light Propagation in Integrated SOI Structure
- A High-Aspect-Ratio Silicon Gate Formation Technique for Beam-Channel MOS Transistor with Impurity-Enhanced Oxidation
- An Infrared Silicon Optical Modulator of Metal–Oxide–Semiconductor Capacitor Based on Accumulation-Carrier Absorption
- Proposal of Vertical-Channel Metal Oxide Semiconductor Field-Effect Transistor with Entirely Oxidized Silicon Beam Isolation
- A Proposal of Corrugated-Channel Transistor (CCT) with Vertically-Formed Channels for Area-Conscious Applications