A Proposal of Corrugated-Channel Transistor (CCT) with Vertically-Formed Channels for Area-Conscious Applications
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概要
- 論文の詳細を見る
In this study, a three-dimensional (3-D) transistor with 1-μm-high multi-beams is proposed. This is named corrugated-channel transistor (CCT) after its "corrugated structure of channels". To realize the corrugated structure, an orientation dependent etching (ODE) of tetra methyl ammonium hydroxide (TMAH) is used. Considering its etching mechanism, the roughness of the vertical channel region is expected to be much smaller and a higher channel aspect ratio has been realized compared with those in the case of conventional dry etching. Utilizing this TMAH etching, CCT having a comb-shaped channel has been successfully developed featuring strongly area-efficient performance.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-04-15
著者
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Yamashita Hiroki
Hiroshima University Research Center For Nanodevices And Systems
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Sunami Hideo
Hiroshima Univ. Hiroshima Jpn
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Furukawa Tomoyasu
Hiroshima University Research Center For Nanodevices And Systems
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Sunami Hideo
Hiroshima University, Research Center for Nanodevices and Systems, 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan
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Furukawa Tomoyasu
Hiroshima University, Research Center for Nanodevices and Systems, 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan
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