KOBAYASHI Kei | Hiroshima University, Research Center for Nanodevices and Systems
スポンサーリンク
概要
関連著者
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Sunami Hideo
Hiroshima Univ. Hiroshima Jpn
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KOBAYASHI Kei
Hiroshima University, Research Center for Nanodevices and Systems
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Sunami Hideo
Hiroshima University Research Center For Nanodevices And Systems
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KATAKAMI Akira
Hiroshima University, Research Center for Nanodevices and Systems
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Katakami Akira
Hiroshima University Research Center For Nanodevices And Systems
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Katakami Akira
Hiroshima University, Research Center for Nanodevices and Systems, 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan
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Kobayashi Kei
Hiroshima University, Research Center for Nanodevices and Systems, 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan
著作論文
- A High-Aspect-Ratio Silicon Gate Formation Technique for Beam-Channel MOS Transistor with Impurity-Enhanced Oxidation
- A High-Aspect-Ratio Silicon Gate Formation Technique for Beam-Channel MOS Transistor with Impurity-Enhanced Oxidation