Impact of Dynamic Stress on Reliability of Nanoscale n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with SiON Gate Dielectric Operating in a Complementary Metal-Oxide-Semiconductor Inverter at Elevated Temperature (Special Issue : Solid Stat

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Kang Bongkoo

  Department Of Electrical Engineering Pohang University Of Science And Technology

• Lee Nam-Hyun

  Department of Electronic and Electrical Engineering, Pohang University of Science and Technology, POSTECH, Pohang, Gyeongbuk 790-784, Korea

• Kim Hyung-wook

  Memory Division, Samsung Electronics, Hwasung, Gyeonggi 445-701, Korea

関連論文

• Effects of Segregated Ge on Electrical Properties of SiO_2/SiGe Interface
• Size and Interface State Dependence of the Luminescence Properties Si Nanocrystals
• Effects of Sulfide Passivation on the Performance of GaAs MISFETs with Photo-CVD Grown P_3N_5 Gate Insulators
• Impact of Dynamic Stress on Reliability of Nanoscale n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with SiON Gate Dielectric Operating in a Complementary Metal-Oxide-Semiconductor Inverter at Elevated Temperature (Special Issue : Solid Stat
• Size and Interface State Dependence of the Luminescence Properties in Si Nanocrystals

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