Size and Interface State Dependence of the Luminescence Properties in Si Nanocrystals

スポンサーリンク

概要

• 論文の詳細を見る

• For Si nanocrystals, which are formed by Si ion implantation into a SiO2 layer, the effects of crystal size and interface states on the photoluminescence property are investigated. The Si-implanted SiO2 samples are annealed in an N2 ambience at different temperatures to obtain Si nanocrystals of different sizes. The sample annealed at 1100°C shows a strong and broad photoluminescence (PL) peak at 700 nm (1.77 eV). The observed PL spectrum redshifts when the annealing temperature increases, blue shifts when the samples are oxidized, and redshifts followed by blue shifts when the average size of the Si nanocrystals increases and then decreases with etch depth of the SiO2 layer. Low-temperature annealing in an H2 ambience increases the PL intensity but does not change the PL spectral distribution. Experimental observations indicate that the size of the Si nanocrystal determines the quantum state for carrier excitation and that the interface states at the Si nanocrystal/SiO2 interface provide the nonradiative recombination centers.

• 2003-04-15

著者

• Ahn Chang-geun

  Department Of Electrical Engineering Pohang University Of Science And Technology

• Jang Tae-su

  Department Of Electrical Engineering Pohang University Of Science And Technology

• Kang Bongkoo

  Department Of Electrical Engineering Pohang University Of Science And Technology

• Kim Kwang-hee

  Department Of Electrical Engineering Kyungpook National University

• Kwon Young-Kyu

  Department of Elecronics, Uiduk University

• Ahn Chang-Geun

  Department of Electrical Engineering, Pohang University of Science and Technology, San 31, Hyoja-Dong, Pohang, Kyungpook 790-784, Korea

• Kim Kwang-Hee

  Department of Electrical Engineering, Kyungpook National University, 1370, Sankyuk, Daegu 702-701, Korea

• Kwon Young-Kyu

  Department of Electronics, Uiduk University, San 50, Yugeom-Ri, Kangdong-myon, Kyongju, Kyungpook 780-910, Korea

• Kang Bongkoo

  Department of Electrical Engineering, Pohang University of Science and Technology, San 31, Hyoja-Dong, Pohang, Kyungpook 790-784, Korea

関連論文

• Low Temperature (≤550℃) Fabrication of CMOS TFT's on Rapid-Thermal CVD Polycrystalline Silicon-Germanium Films
• Low Temperature(≦550℃) CMOS Thin-Film Transistors in RTCVD Poly-Si_Ge_ Films
• Effects of Segregated Ge on Electrical Properties of SiO_2/SiGe Interface
• Size and Interface State Dependence of the Luminescence Properties Si Nanocrystals
• Effects of Sulfide Passivation on the Performance of GaAs MISFETs with Photo-CVD Grown P_3N_5 Gate Insulators
• Impact of Dynamic Stress on Reliability of Nanoscale n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with SiON Gate Dielectric Operating in a Complementary Metal-Oxide-Semiconductor Inverter at Elevated Temperature (Special Issue : Solid Stat
• Size and Interface State Dependence of the Luminescence Properties in Si Nanocrystals

スポンサーリンク