Kim Hyung-wook | Memory Division, Samsung Electronics, Hwasung, Gyeonggi 445-701, Korea

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概要

関連著者

Kang Bongkoo
Department Of Electrical Engineering Pohang University Of Science And Technology
Lee Nam-Hyun
Department of Electronic and Electrical Engineering, Pohang University of Science and Technology, POSTECH, Pohang, Gyeongbuk 790-784, Korea
Kim Hyung-wook
Memory Division, Samsung Electronics, Hwasung, Gyeonggi 445-701, Korea

著作論文

Impact of Dynamic Stress on Reliability of Nanoscale n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with SiON Gate Dielectric Operating in a Complementary Metal-Oxide-Semiconductor Inverter at Elevated Temperature (Special Issue : Solid Stat

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