The effect of dislocation density and surface morphology on the optical properties of InGaN/GaN quantum wells grown on r-plane sapphire substrates
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Humphreys Colin
Department Of Materials Science And Metallurgy University Of Cambridge
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Kappers Menno
Department Of Materials Science And Metallurgy University Of Cambridge
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Moram Michelle
Department Of Materials Science And Metallurgy University Of Cambridge
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Badcock Tom
School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL, U.K.
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Dawson Phil
School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL, U.K.
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Hao Rui
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB2 3QZ, U.K.
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