Structural Characterisation of Improved GaN Epilayers Grown on a Ge(111) Substrate
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概要
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Despite the large lattice mismatch between GaN and Ge of 20.1%, the successful growth of GaN on Ge(111) using plasma-assisted molecular beam epitaxy (PA-MBE) has been achieved. Recent work has shown that the crystal quality of GaN can be improved using either a miscut substrate or a higher growth temperature (above 800 °C), to enhance the step-flow growth. This paper reports the structural characterisation of these improved GaN epilayers grown on Ge. The threading dislocation density has been measured using cross-sectional transmission electron microscopy (TEM) imaging. The polarity of the epilayers is determined using convergent beam electron diffraction (CBED).
- 2011-09-25
著者
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Humphreys Colin
Department Of Materials Science And Metallurgy University Of Cambridge
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Fu Wai-yuan
Department Of Materials Science And Metallurgy University Of Cambridge
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Zhang Yucheng
Department Of Materials Science And Metallurgy University Of Cambridge
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Lieten Ruben
III--V Systems, IMEC, Kapeldreef 75, 3001 Leuven, Belgium
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